Hynix Semiconductor Inc. today claimed to be the first memory maker to develop a commercially applicable ferroelectric RAM (FeRAM). FeRAM is a non-volatile, low power, high-density and high speed ...
To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...
The Tokyo Institute of Technology, Fujitsu Laboratories, and Fujitsu Limited have jointly developed a new material for non-volatile ferroelectric RAM (FeRAM). The material is a modified composition of ...
SAN FRANCISCO — At the International Solid-State Circuits Conference (ISSCC) here, Toshiba Corp. will describe a high-density, 128-megabit ferroelectric random access memory (FeRAM or FRAM). Based on ...
Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write ...
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