The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...

Finfet technology, with its 3D structure, is seen as the key semiconductor technology for the next generation of deep sub-micron chip design. Leah Schuth describes how physical IP developers will rise ...

The industry’s quest to continue on the semiconductor roadmap defined by Moore’s Law has led to the adoption of a new transistor structure. Whether you call them finFETs, tri-gate or 3D transistors, ...

With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the ...

Intel's decision to put triple-gate or finFET-style transistors into action in its forthcoming 22nm process signals the beginning of the end for the classic planar transistor on bulk silicon. Although ...

Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...

Samsung sends word that its production ramp-up of the 10-nanometer (nm) FinFET process technology is on track with steady high yields. They also mention 8nm and 6nm. Samsung has shipped more than ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...