WEST LAFAYETTE, Ind. – Researchers have experimentally demonstrated how to harness a property called negative capacitance for a new type of transistor that could reduce power consumption, validating a ...

It has been long known that complementary metal-oxide semiconductor (CMOS) transistors suffer from a scaling issue. As CMOS field-effect transistors (FETs) get smaller, they become less power ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

(Nanowerk News) Researchers have experimentally demonstrated how to harness a property called negative capacitance for a new type of transistor that could reduce power consumption, validating a theory ...