CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...
Researchers at Pohang University of Science & Technology (POSTECH) developed a zinc oxide (ZnO) and tellurium (Te) heterojunction transistor technology that exhibits negative differential ...
Ambipolar organic field-effect transistors (OFETs) are devices that support balanced transport of electrons and holes within a single semiconducting layer. By enabling dual-polarity operation, they ...
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