The next generation of microelectronics relies on radical improvements in transistor switching performance to advance ...
Tunneling field-effect transistors (TFETs) exploit quantum mechanical band-to-band tunnelling to overcome the thermionic limit on subthreshold swing, promising orders-of-magnitude reductions in power ...
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1,112°F: New silicon carbide transistor could be used for electronics in extreme heat
Researchers at Kyoto University have developed a silicon carbide (SiC) transistor designed to operate ...
With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...
Most transistors have three terminals, often labeled as emitter, base, and collector (in bipolar junction transistors) or source, gate, and drain (in field-effect transistors). Applying a small signal ...
Electronic devices usually don’t cope well with extreme heat. But researchers in Japan have developed a new type of ...
Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...
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Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs
A research team at Kyoto University has built a silicon carbide transistor that operates at 600°C (873 K) using ion ...
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