Researchers at the Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, have achieved the world's lowest write power for a specific type of memory storage device. Not only ...
Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...
A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...
Forbes contributors publish independent expert analyses and insights. I attended the 2024 IEEE Magnetics Society TMRC conference at the University of California in Berkeley. The sessions I attended ...
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