The LQA10T300 is a member of Power Integrations’ Qspeed family. This Q-series diode has the lowest QRR of any 300 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
The introduction of silicon carbide (SiC) diodes has been a welcome solution to the reverse recovery losses in continuous conduction mode (CCM) boost power factor corrector (PFC) converters. While SiC ...
MALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low ...
Ahead of the upcoming APEC Conference, Global Power Device, Inc. (GPD) announced a new line of Silicon Carbide (SiC) diodes that delivers ultra-high performance at prices that are competitive with ...
PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...
Thanks to their fast switching and reduced losses, SiC wide-bandgap devices help designers achieve efficient, integrated motor drives, enabling them to reduce size and get closer to the motor to lower ...
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