Abstract: Recent investigations of one-transistor-one-resistive random access memory (RRAM) (1T1R) memory arrays at 40 and 28 nm technology nodes indicate that access transistor reliability represents ...
Abstract: Resistive random access memory (RRAM) is a promising candidate for next generation nonvolatile memory technology. In this paper, electrothermal simulation in 3-D RRAM arrays is performed by ...
Key Laboratory of Advanced Materials (MOE) and School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China Department of Physics and Astronomy, University of Georgia, ...
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