Abstract: An accurate physics-based capacitance model is developed covering full-region operations of silicon TFET (Si-TFET) with all biasing conditions. The intrinsic and parasitic capacitances are ...
Abstract: Accurate modeling of nonlinear capacitance is significant for physics-based compact modeling of GaN high-electric-mobility transistor (HEMT). For conventional methods, physical modeling of ...
This week, the Memphis Fire Department ushered in new fire engines with a decades-old tradition. And, in federal court, the U.S. Attorney's office secured a conviction against a man accused of ...
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